High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

Abstract

We have investigated the electron mobility on field-effect transistors based on PDIF-CN${}_2$ single crystals. The family of the small molecules PDI8-CN${}_2$ has been chosen for the promising results obtained for vapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA (spinned on top of the SiO${}_2$), to reduce the possibility of electron trapping by hydroxyl groups present at surface of the oxide. For these devices we obtained a room temperature mobility of 6 cm${}^2$/Vs in vacuum and 3 cm${}^2$/Vs in air. Our measurements demonstrate the possibility to obtain n-type OFETs with performances comparable to those of p-type devices.

published online in JACS

References in corpus (5)

• Intrinsic charge transport on the surface of organic semiconductors
• Organic Single-Crystal Field-Effect Transistors
• Tunable Frohlich Polarons in Organic Single-Crystal Transistors
• Field-Effect Transistors on Tetracene Single Crystals
• Single crystal field-effect transistors based on an organic selenium-containing semiconductor

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• High-performance $n$-type organic field-effect transistors with ionic liquid gates
• Lyotropic chromonic liquid crystal semiconductors for water-solution processable organic electronics
• Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors
• Very low bias stress in n-type organic single crystal transistors
• Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes