Single crystal field-effect transistors based on an organic selenium-containing semiconductor

Abstract

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

References in corpus (5)

• Organic Single-Crystal Field-Effect Transistors
• Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
• Single-Crystal Organic Field Effect Transistors with the Hole Mobility ~ 8 cm2/Vs
• Single-crystal field-effect transistors based on copper phthalocyanine
• Hole mobility in organic single crystals measured by a "flip-crystal" field-effect technique

Cited by in corpus (1)

• High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors