Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers

Abstract

The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the transition temperature (Tc) on annealing time marks out two regions. The Tc peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second (`saturated') region the effect of the annealing time is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield Tc-values of ~ 150 K and above, regardless of the thickness of the epilayers.

5 pages, 3 figures

References in corpus (11)

• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Mn Interstitial Diffusion in (Ga,Mn)As
• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
• Self-compensation in manganese-doped ferromagnetic semiconductors
• Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs
• Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
• Enhanced annealing effect in an oxygen atmosphere on GaMnAs
• Magnetization of ultrathin (Ga,Mn)As layers

Cited by in corpus (5)

• Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
• Optical Properties of III-Mn-V Ferromagnetic Semiconductors
• Diffusion and clustering of substitutional Mn in (Ga,Mn)As
• Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers
• Correlation effects in the density of states of annealed GaMnAs