Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO$_{3}$/SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$

T. Fujii; M. Kawasaki; A. Sawa; H. Akoh; Y. Kawazoe; Y. Tokura

doi:10.1063/1.1845598

paper

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO $_{3}$ /SrTi $_{0.99}$ Nb $_{0.01}$ O $_{3}$

arXiv:cond-mat/0411474 · doi:10.1063/1.1845598

Abstract

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO $_{3}$ (SRO) film epitaxially grown on SrTi $_{0.99}$ Nb $_{0.01}$ O $_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ( $I$ - $V$ ) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$ -type semiconductor (Nb:STO). A hysteresis appears in the $I$ - $V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $I^¼$ s - 10 ms duration.

3 pages, 3 figures, Appl. Phys. Lett., in press

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3​/SrTi0.99​Nb0.01​O3​

Abstract

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO $_{3}$ /SrTi $_{0.99}$ Nb $_{0.01}$ O $_{3}$