Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO${}_3$/SrTi${}_{0.99}$Nb${}_{0.01}$O${}_3$

Abstract

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO${}_3$ (SRO) film epitaxially grown on SrTi${}_{0.99}$Nb${}_{0.01}$O${}_3$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.

3 pages, 3 figures, Appl. Phys. Lett., in press

References in corpus (2)

• Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr${}_{0.7}$Ca${}_{0.3}$MnO${}_3$ interface
• Field-Driven Hysteretic and Reversible Resistive Switch at the Ag-Pr0.7Ca0.3MnO3 Interface

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