activity
19992018
most citedHysteretic current-voltage characteristics and resistance switching at a rectifying Ti/PrCaMnO interface

753 citations · 1.3k across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.str-el2018★ 27 cited

Probing ultrafast spin-relaxation and precession dynamics in a cuprate Mott insulator with 7-fs optical pulses

T. Miyamoto, Y. Matsui, T. Terashige +10

A charge excitation in a two-dimensional Mott insulator is strongly coupled with the surrounding spins, which is observed as magnetic-polaron formations of doped carriers and a mag…

cond-mat.mes-hall2014★ 24 cited

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

David Jiménez, Enrique Miranda, Atsushi Tsurumaki-Fukuchi +3

We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 in…

cond-mat.str-el2013★ 34 cited

Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in LaSrMnO thin films studied by x-ray magnetic circular dichroism

Goro Shibata, Kohei Yoshimatsu, Enju Sakai +14

Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its drivi…

cond-mat.mtrl-sci2013★ 30 cited

Role of doped Ru in coercivity-enhanced LaSr_3$ thin film studied by x-ray magnetic circular dichroism

T. Harano, G. Shibata, K. Ishigami +15

The coercivity of LaSrMnO thin films can be enhanced by Ru substitution for Mn. In order to elucidate its mechanism, we performed soft x-ray absorption and magnetic…

cond-mat.str-el2007★ 27 cited

Optical probe of electrostatic doping in an n-type Mott insulator

M. Nakamura, A. Sawa, H. Sato +3

Electrostatic doping into an -type Mott insulator SmCuO has been successfully achieved with use of the heterojunction with an -type band semiconductor Nb-doped Sr…

cond-mat.mtrl-sci2004★ 361 cited

Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO/SrTiNbO

T. Fujii, M. Kawasaki, A. Sawa +3

Transport properties have been studied for a perovskite heterojunction consisting of SrRuO (SRO) film epitaxially grown on SrTiNbO (Nb:STO) substrate.…