Influence of defects on the lattice constant of GaMnAs

Abstract

We study the influence of main compensating defects: As antisites and Mn interstitials, known to occur in GaMnAs ferromagnetic semiconductor, on its structural properties. Our experimental results show that there is a balance between Mn interstitial and As antisite defects, leading to the reduced density of one type of defect upon increased density of another defect. The significant differences in the lattice parameters of GaMnAs with the different balance between these two types of defects were observed. The annealing induced reduction of GaMnAs lattice constant is inhibited in the samples with large density of As antisites.

17 pages, 4 figures

References in corpus (18)

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• Monte Carlo simulations of an impurity band model for III-V diluted magnetic semiconductors
• Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers
• Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films
• Magnetization of ultrathin (Ga,Mn)As layers

Cited by in corpus (16)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs
• Compensation, interstitial defects and ferromagnetism in diluted semiconductors
• Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
• Cr doped III-V nitrides: potential candidates for spintronics
• Antisite effect on ferromagnetism in (Ga,Mn)As
• High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As
• Intrinsic and Extrinsic Contributions to the Lattice Parameter of GaMnAs
• On the origin of magnetism in (Ga,Mn)As: from paramagnetic through superparamagnetic to ferromagnetic phase
• All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
• Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
• Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
• Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures
• Hard X-ray Photoelectron Momentum Microscopy and Kikuchi Diffraction on (In,Ga,Mn)As Thin Films
• Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al