A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

Abstract

We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5nm and 10nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold.

arXiv comment26 pages, 8 figures

References in corpus (6)

• Carbon Nanotubes as Schottky Barrier Transistors
• Role of Fermi-level pinning in nanotube Schottky diodes
• Drain Voltage Scaling in Carbon Nanotube Transistors
• Schottky barriers in carbon nanotube heterojunctions
• Unexpected Scaling of the Performance of Carbon Nanotube Transistors
• Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode

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