Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

Abstract

We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.

arXiv comment4 pages, postscript figures included

References in corpus (5)

• Magnetic Field Suppression of the Conducting Phase in Two Dimensions
• Spin Degree of Freedom in a Two-Dimensional Electron Liquid
• Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field
• Metallic low-temperature resistivity in 2D over an extended temperature range
• Effect of Tilted Magnetic Field on the Anomalous H=0 Conducting Phase in High-Mobility Si MOSFETs

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