Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
arXiv:2411.11695 · doi:10.1103/s624-dvvs
Abstract
We present a scalable protocol for suppressing errors during electron spin shuttling in silicon quantum dots. The approach maps the valley Hamiltonian to a Landau-Zener problem to model the nonadiabatic dynamics in regions of small valley splitting. An optimization refines the shuttling velocity profile over a single small segment of the shuttling path. The protocol reliably returns the valley state to the ground state at the end of the shuttle, disentangling the spin and valley degrees of freedom, after which a single virtual -rotation on the spin compensates its evolution during the shuttle. The time cost and complexity of the error suppression is minimal and independent of the distance over which the spin is shuttled, and the maximum velocities imposed by valley physics are found to be orders of magnitude larger than current experimentally achievable shuttling speeds. This protocol offers a chip-scale solution for high-fidelity quantum transport in silicon spin-based quantum computing devices.
References in corpus (40)
- QuTiP 2: A Python framework for the dynamics of open quantum systems
- Single-shot read-out of an individual electron spin in a quantum dot
- Silicon Quantum Electronics
- A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
- Semiconductor Spin Qubits
- Efficient Z-Gates for Quantum Computing
- Charge-qubit operation of an isolated double quantum dot
- Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
- Strong Coupling of a Single Electron in Silicon to a Microwave Photon
- Shuttling a single charge across a one-dimensional array of silicon quantum dots
- Nonadiabatic Landau-Zener-Stückelberg-Majorana transitions, dynamics, and interference
- Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
- Coherence of Spin Qubits in Silicon
- Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations
- Coherent shuttle of electron-spin states
- Coherent spin qubit transport in silicon
- Coherent spin-spin coupling mediated by virtual microwave photons
- Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
- Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
- Electrically Protected Valley-Orbit Qubits in Silicon
- A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
- Distant spin entanglement via fast and coherent electron shuttling
- Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO
- Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
- Noise-correlation spectrum for a pair of spin qubits in silicon
- Electron g-factor of valley states in realistic silicon quantum dots
- Shuttling an electron spin through a silicon quantum dot array
- Disorder-induced valley-orbit hybrid states in Si quantum dots
- Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
- Coherent spin qubit shuttling through germanium quantum dots
- A silicon singlet-triplet qubit driven by spin-valley coupling
- Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
- Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling
- Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
- High-fidelity single-spin shuttling in silicon
- Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
- Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
- Characterization of individual charge fluctuators in Si/SiGe quantum dots
- Valley splitting depending on the size and location of a silicon quantum dot
- Control of dephasing in spin qubits during coherent transport in silicon