78 citations · 311 across the 17 of their papers we have counts for
18 papers
Spectroscopy With Intelligent Feature Tracking for automated characterization of excited-state structure in semiconductor quantum dot devices
A. R. Huffman, Daniel Schug, Merritt Losert +6
The characterization of excited-state structure in semiconductor quantum dot (QD) devices is an important component of tuning them for spin-qubit operation. We present Spectroscopy…
Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells
Merritt P. R. Losert, S. N. Coppersmith, Mark Friesen
Spatial variations of the valley splitting in a quantum well present a key challenge for conveyor-mode shuttling of electron spins in Si/SiGe, giving rise to Landau-Zener-like exci…
Automated electrostatic characterization of quantum dot devices in single- and bilayer heterostructures
Merritt P. R. Losert, Dario Denora, Barnaby van Straaten +6
As quantum dot (QD)-based spin qubits advance toward larger, more complex device architectures, rapid, automated device characterization and data analysis tools become critical. Th…
The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith +2
In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dip…
Statistical characterization of valley coupling in Si/SiGe quantum dots via -factor measurements near a valley vortex
Benjamin D. Woods, Merritt P. Losert, Nasir R. Elston +5
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing…
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Lucas E. A. Stehouwer, Merrit P. Losert, Maia Rigot +6
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursue…
Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
Jonathan C. Marcks, Emily Eagen, Emma C. Brann +12
Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate e…
g-factor theory of Si/SiGe quantum dots: spin-valley and giant renormalization effects
Benjamin D. Woods, Merritt P. Losert, Robert Joynt +1
Understanding the -factor physics of Si/SiGe quantum dots is crucial for realizing high-quality spin qubits. While previous work has explained some aspects of -factor physics…
Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
Róbert Németh, Vatsal K. Bandaru, Pedro Alves +7
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; howeve…
Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling
Yasuo Oda, Merritt P. Losert, Jason P. Kestner
We present a scalable protocol for suppressing errors during electron spin shuttling in silicon quantum dots. The approach maps the valley Hamiltonian to a Landau-Zener problem to…
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Jan Klos, Jan Tröger, Jens Keutgen +10
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homo…
Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
Merritt P. Losert, Max Oberländer, Julian D. Teske +5
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently trans…
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…
Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
Merritt P. Losert, M. A. Eriksson, Robert Joynt +4
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two l…
SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits
Thomas McJunkin, Benjamin Harpt, Yi Feng +10
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band mi…
Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling +16
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite att…
How valley-orbit states in silicon quantum dots probe quantum well interfaces
J. P. Dodson, H. Ekmel Ercan, J. Corrigan +7
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron i…
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato +10
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on…