activity
20202026
most citedThe effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe

1 citations · 1 across the 6 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2026

Spectroscopy With Intelligent Feature Tracking for automated characterization of excited-state structure in semiconductor quantum dot devices

A. R. Huffman, Daniel Schug, Merritt Losert +6

The characterization of excited-state structure in semiconductor quantum dot (QD) devices is an important component of tuning them for spin-qubit operation. We present Spectroscopy…

cond-mat.mes-hall2026

Using a spin-triplet encoding to enhance shuttling fidelities in Si/SiGe quantum wells

Merritt P. R. Losert, S. N. Coppersmith, Mark Friesen

Spatial variations of the valley splitting in a quantum well present a key challenge for conveyor-mode shuttling of electron spins in Si/SiGe, giving rise to Landau-Zener-like exci…

cond-mat.mes-hall2025

Automated electrostatic characterization of quantum dot devices in single- and bilayer heterostructures

Merritt P. R. Losert, Dario Denora, Barnaby van Straaten +6

As quantum dot (QD)-based spin qubits advance toward larger, more complex device architectures, rapid, automated device characterization and data analysis tools become critical. Th…

cond-mat.mes-hall20251 cited

The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe

Merritt P. R. Losert, Utkan Güngördü, S. N. Coppersmith +2

In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dip…

cond-mat.mes-hall2025

Statistical characterization of valley coupling in Si/SiGe quantum dots via -factor measurements near a valley vortex

Benjamin D. Woods, Merritt P. Losert, Nasir R. Elston +5

The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing…

cond-mat.mes-hall2025

Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting

Lucas E. A. Stehouwer, Merrit P. Losert, Maia Rigot +6

Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursue…