Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

Abstract

Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.

7 pages, 5 figures

References in corpus (15)

• Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Wafer-scale nanofabrication of telecom single-photon emitters in silicon
• Detection of single W-centers in silicon
• Engineering telecom single-photon emitters in silicon for scalable quantum photonics
• Optical properties of an ensemble of G-centers in silicon
• All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity
• Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics
• Indistinguishable photons from an artificial atom in silicon photonics
• Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
• ODMR on Single TR12 Centers in Diamond
• Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
• Genuine and faux single G centers in carbon-implanted silicon
• Boron Liquid Metal Alloy Ion Sources For Special FIB Applications
• Ultralong-term high-density data storage with atomic defects in SiC