CMOS on-chip thermometry at deep cryogenic temperatures

Abstract

Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has stimulated much interest in ICs operating a deep cryogenic temperatures (typically 0.01 - 4 K), in which the reduced thermal conductivity of silicon and silicon oxide, and the limited cooling power budgets make local on-chip temperature sensing even more important. Here, we report four different methods for on-chip temperature measurements native to complementary metal-oxide-semiconductor (CMOS) industrial fabrication processes. These include secondary and primary thermometry methods and cover conventional thermometry structures used at room temperature as well as methods exploiting phenomena which emerge at cryogenic temperatures, such as superconductivity and Coulomb blockade. We benchmark the sensitivity of the methods as a function of temperature and use them to measure local excess temperature produced by on-chip heating elements. Our results demonstrate thermometry methods that may be readily integrated in CMOS chips with operation from the milliKelivin range to room temperature.

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Cited by in corpus (6)

• Rapid cryogenic characterisation of 1024 integrated silicon quantum dots
• Method for efficient large-scale cryogenic characterization of CMOS technologies
• Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon
• An Integrated Deep-Cryogenic Temperature Sensor in CMOS Technology for Quantum Computing Applications
• Real-time milli-Kelvin thermometry in a semiconductor qubit architecture
• Effects of the thin-film thickness on superconducting NbTi microwave resonators for on-chip cryogenic thermometry