The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling

Abstract

Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduce the SpinBus architecture, which uses electron shuttling to connect qubits and features low operating frequencies and enhanced qubit coherence. Device simulations for all relevant operations in the Si/SiGe platform validate the feasibility with established semiconductor patterning technology and operation fidelities exceeding 99.9 %. Control using room temperature instruments can plausibly support at least 144 qubits, but much larger numbers are conceivable with cryogenic control circuits. Building on the theoretical feasibility of high-fidelity spin-coherent electron shuttling as key enabling factor, the SpinBus architecture may be the basis for a spin-based quantum processor that meets the scalability requirements for practical quantum computing.

15 pages, 9 figures

References in corpus (23)

• Surface codes: Towards practical large-scale quantum computation
• Computing with spin qubits at the surface code error threshold
• Fast universal quantum control above the fault-tolerance threshold in silicon
• Universal control of a six-qubit quantum processor in silicon
• Electrometry Using Coherent Exchange Oscillations in a Singlet-Triplet-Qubit
• Two-qubit silicon quantum processor with operation fidelity exceeding 99%
• Scalable gate architecture for densely packed semiconductor spin qubits
• Quantum error correction with silicon spin qubits
• Universal logic with encoded spin qubits in silicon
• Coherent spin qubit transport in silicon
• Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
• A shuttling-based two-qubit logic gate for linking distant silicon quantum processors
• Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
• Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO${}_2$
• A cryogenic amplifier for fast real-time detection of single-electron tunneling
• Shuttling an electron spin through a silicon quantum dot array
• Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
• Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
• Nonlinear response and crosstalk of electrically driven silicon spin qubits
• qopt: An experiment-oriented Qubit Simulation and Quantum Optimal Control Package
• Sensing dot with high output swing for scalable baseband readout of spin qubits
• Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
• Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor

Cited by in corpus (36)

• Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
• Coherent spin qubit shuttling through germanium quantum dots
• Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
• A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
• Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling
• High-fidelity single-spin shuttling in silicon
• Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
• Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
• Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
• Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
• Flying Spin Qubits in Quantum Dot Arrays Driven by Spin-Orbit Interaction
• Near-Term Spin-Qubit Architecture Design via Multipartite Maximally-Entangled States
• Sensing dot with high output swing for scalable baseband readout of spin qubits
• Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields
• Parity-dependent state transfer for direct entanglement generation
• Electron qubits surfing on acoustic waves: review of recent progress
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• Optimizing quantum sensing networks via genetic algorithms and deep learning
• Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
• Erasure conversion for singlet-triplet spin qubits enables high-performance shuttling-based quantum error correction
• Compiling the surface code to crossbar spin qubit architectures
• Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
• Variability of hole spin qubits in planar Germanium
• Decoherence and fidelity enhancement during shuttling of entangled spin qubits
• Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
• Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
• Charge-induced energy shift of a single-spin qubit under a magnetic-field gradient
• Spin qubit shuttling between coupled quantum dots with inhomogeneous Landé g-tensors
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling
• Coupling a ${}^{73}$Ge nuclear spin to an electrostatically defined quantum dot
• Digital-Controlled Method of Conveyor-Belt Spin Shuttling in Silicon for Large-Scale Quantum Computation
• Four-state discrimination for a pair of spin qubits via gate reflectometry
• Switchable spin-photon coupling with hole spins in single-quantum dots
• Fast high-fidelity baseband reset of a latched state for quantum dot qubit readout
• Phonon-induced frequency shift in semiconductor spin qubits
• Numerical simulation of coherent spin-shuttling in a QuBus with charged defects