Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Abstract

Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor industry, has remained an open challenge. Here, we demonstrate a controlled rotation two-qubit gate on hole spins in an industry-compatible device. A short gate time of 24 ns is achieved. The quantum logic exploits an exchange interaction that can be tuned from above 500 MHz to close-to-off. Significantly, the exchange is strikingly anisotropic. By developing a general theory, we show that the anisotropy arises as a consequence of a strong spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 90 degrees. The exchange Hamiltonian no longer has Heisenberg form and is engineered in such a way that there is no trade-off between speed and fidelity of the two-qubit gate. This ideal behaviour applies over a wide range of magnetic field orientations rendering the concept robust with respect to variations from qubit to qubit. Our work brings hole spin qubits in silicon transistors a step closer to the realization of a large-scale quantum computer.

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Cited by in corpus (21)

• Operating semiconductor quantum processors with hopping spins
• A singlet-triplet hole-spin qubit in MOS silicon
• Valley-Free Silicon Fins Caused by Shear Strain
• Single-step high-fidelity three-qubit gates by anisotropic chiral interactions
• Dephasing of planar Ge hole spin qubits due to 1/$\text{f}$ charge noise
• A spinless spin qubit
• Optimal operation of hole spin qubits
• Quantum geometric protocols for fast high-fidelity adiabatic state transfer
• Mitigation of exchange cross-talk in dense quantum dot arrays
• All-electrical operation of a spin qubit coupled to a high-Q resonator
• Multi-qubit DC gates over an inhomogeneous array of quantum dots
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Variability of hole spin qubits in planar Germanium
• Effect of disorder and strain on the operation of planar Ge hole spin qubits
• Variational quantum compiling for three-qubit gates design in quantum dots
• Cancelling second order frequency shifts in Ge hole spin qubits via bichromatic control
• Dressed basis sets for the modeling of exchange interactions in double quantum dots
• Color it, Code it, Cancel it: k-local dynamical decoupling from classical additive codes
• Switchable spin-photon coupling with hole spins in single-quantum dots
• Sweet-spot protection of hole spins in sparse arrays via spin-dependent magnetotunneling
• Spin qubit shuttling between coupled quantum dots with inhomogeneous Landé g-tensors