activity
20202025
most citedA hole spin qubit in a fin field-effect transistor above 4 kelvin

199 citations · 352 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2025

In-situ control of hole-spin driving mechanisms

Simon Geyer, Rafael S. Eggli, Carlos dos Santos +6

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically…

cond-mat.mes-hall2023★ 19 cited

Phase driving hole spin qubits

Stefano Bosco, Simon Geyer, Leon C. Camenzind +7

The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here,…

cond-mat.mes-hall2023★ 13 cited

Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Rafael S. Eggli, Simon Svab, Taras Patlatiuk +8

Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high…

cond-mat.mes-hall2022★ 6 cited

A compact and versatile cryogenic probe station for quantum device testing

Mathieu de Kruijf, Simon Geyer, Toni Berger +4

Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput devi…

cond-mat.mes-hall2022★ 44 cited

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Simon Geyer, Bence Hetényi, Stefano Bosco +7

Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electric…

cond-mat.mes-hall2022★ 11 cited

Identifying Pauli spin blockade using deep learning

Jonas Schuff, Dominic T. Lennon, Simon Geyer +9

Pauli spin blockade (PSB) can be employed as a great resource for spin qubit initialisation and readout even at elevated temperatures but it can be difficult to identify. We presen…

cond-mat.mes-hall2021★ 11 cited

Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning

B. Severin, D. T. Lennon, L. C. Camenzind +20

The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a ke…

cond-mat.mes-hall2021★ 199 cited

A hole spin qubit in a fin field-effect transistor above 4 kelvin

Leon C. Camenzind, Simon Geyer, Andreas Fuhrer +3

The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin fi…

cond-mat.mes-hall2020★ 49 cited

Silicon quantum dot devices with a self-aligned second gate layer

Simon Geyer, Leon C. Camenzind, Lukas Czornomaz +5

We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect la…