Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon

Abstract

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36% at an angle of incidence of 20° for the four samples and increases to up to 65% at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

arXiv comment18 pages, 11 figures

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Cited by in corpus (6)

• Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO
• Kiloton-scale xenon detectors for neutrinoless double beta decay and other new physics searches
• Absolute light yield of the EJ-204 plastic scintillator
• Development of silicon interposer: towards an ultralow radioactivity background photodetector system
• Demonstrating a broadband Photon Detection Efficiency model on VUV sensitive Silicon Photomultipliers
• Characterization of external cross-talk from silicon photomultipliers in a liquid xenon detector