Demonstrating a broadband Photon Detection Efficiency model on VUV sensitive Silicon Photomultipliers
arXiv:2508.16005 · doi:10.1016/j.nima.2026.171526
Abstract
We present a versatile analytic model describing Photon Detection Efficiency (PDE) for P-on-N silicon photomultipliers, with possible applications for device characterization, PDE extrapolation from limited data, simulation and design optimization. Using device specific parameters, SiPM PDE is modeled as a function of wavelength, angle of incidence, voltage, and limited temperature range. By factoring the PDE into transmission and internal efficiency, the performance in liquid nobles and other dense media can be predicted. We present the measurement of the absolute PDE from 350 to 830 nm at 163 K for two VUV sensitive SiPMs: a Hamamatsu VUV4 and Fondazione Bruno Kessler VUV-HD Technology. Additional measurements of relative PDE versus angle are also included. We successfully fit the model to the data, compare with literature and show the model's predictive power by extrapolating PDE to new wavelengths and operation in liquid xenon and argon, which is useful for estimating performance and the impact of external cross-talk in future large-scale experiments. Lastly we use the model to investigate optimizing efficiency for specific applications in astroparticle physics and quantum computing.
References in corpus (23)
- Satellite-to-ground quantum key distribution
- NEXO: Neutrinoless double beta decay search beyond year half-life sensitivity
- The scintillation of liquid argon
- Characterization of the Hamamatsu VUV4 MPPCs for nEXO
- Characterisation of a silicon photomultiplier device for applications in liquid argon based neutrino physics and dark matter searches
- Characterisation of Silicon Photomultipliers for Liquid Xenon Detectors
- UV anti-reflection coatings for use in silicon detector design
- Optical Memory in a Microfabricated Rubidium Vapor Cell
- Characterization of SiPM Avalanche Triggering Probabilities
- Polyethylene naphthalate film as a wavelength shifter in liquid argon detectors
- Assignment of the NV0 575 nm zero-phonon line in diamond to a 2E-2A2 transition
- Performance of Hamamatsu VUV4 SiPMs for detecting liquid argon scintillation
- A method for characterizing after-pulsing and dark noise of PMTs and SiPMs
- Characterization of VUV4 SiPM for Liquid Argon Detector
- Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths
- Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon
- Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon
- Measurement of the Photon Detection Efficiency of Hamamatsu VUV4 SiPMs at Cryogenic Temperature
- Why would you put a flashlight in a dark matter detector?
- Photoelectric absorption cross section of silicon near the band gap from room temperature to sub-Kelvin temperature
- Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature
- Batch VUV4 Characterization for the SBC-LAr10 scintillating bubble chamber
- Measurements of the Quantum Yield of Silicon using Geiger-mode Avalanching Photodetectors