Study of Silicon Photomultiplier Performance in External Electric Fields

Abstract

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No observable physical damage to the bulk or surface of the devices was caused by the exposure.

arXiv comment16 pages, 12 figures, 2 tables and two conferences (INPC2016 and TIPP2017)

References in corpus (5)

• Sensitivity and discovery potential of the proposed nEXO experiment to neutrinoless double beta decay
• nEXO Pre-Conceptual Design Report
• VUV-sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO
• Characterization of Silicon Photomultipliers for nEXO
• On the Evaluation of Silicon Photomultipliers for Use as Photosensors in Liquid Xenon Detectors

Cited by in corpus (6)

• VUV-sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO
• Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon
• Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon
• GPU-based optical simulation of the DARWIN detector
• New Technologies for Discovery
• Study of Silicon Photomultiplier Radiation Hardness with Proton Beam from the JULIC Cyclotron