Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot

Abstract

We report a single-shot-based projective readout of a semiconductor hybrid qubit formed by three electrons in a GaAs double quantum dot. Voltage-controlled adiabatic transitions between the qubit operations and readout conditions allow high-fidelity mapping of quantum states. We show that a large ratio both in relaxation time vs. tunneling time (~ 50) and singlet-triplet splitting vs. thermal energy (~ 20) allow energy-selective tunneling-based spin-to-charge conversion with readout visibility ~ 92.6%. Combined with ac driving, we demonstrate high visibility coherent Rabi and Ramsey oscillations of a hybrid qubit in GaAs. Further, we discuss the generality of the method for use in other materials, including silicon.

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