Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide

Abstract

Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab-initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS${}_2$. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.

9 pages, 4 figures; Supp 5 pages, 4 figures

References in corpus (16)

• Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
• The Renaissance of Black Phosphorus
• Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
• p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications
• Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
• Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride
• Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy
• Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
• Titanium trisulfide monolayer: A new direct-gap semiconductor with high and anisotropic carrier mobility
• Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
• Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of Monolayer Distorted 1-T Diamond-chain Structures
• Disorder engineering and conductivity dome in ReS2 with electrolyte gating
• Probing Single Vacancies in Black Phosphorus at the Atomic Level
• Direct observation of the band gap transition in atomically thin ReS${}_2$
• Electronic bandstructure of ReS2 by high resolution angle resolved photoemission spectroscopy
• Moiré patterns in graphene -- rhenium disulfide vertical heterostructures

Cited by in corpus (2)

• Gate controlled quantum dots in monolayer WSe2
• Design and implementation of a device based on an off-axis parabolic mirror to perform luminescence experiments in a scanning tunneling microscope