4 papers
Exact Diagonalization for Magic-Angle Twisted Bilayer Graphene
Pawel Potasz, Ming Xie, Allan H. MacDonald
We report on finite-size exact-diagonalization calculations in a Hilbert space defined by the continuum-model flat moiré bands of magic angle twisted bilayer graphene (MATBG). For…
Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices
Nicolás Morales-Durán, Pawel Potasz, Allan H. MacDonald
Moiré superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom ca…
Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
Ryan Plumadore, Mehmet Baskurt, Justin Boddison-Chouinard +7
Atomic scale defects in semiconductors enable their technological applications and realization of novel quantum states. Using scanning tunneling microscopy and spectroscopy complem…
Topological phase transitions in Chern insulators within three-band models
P. Potasz, B. Jaworowski, M. Kupczyński +3
We investigate topological phase transitions in Chern insulators within three-band models, focusing on the empty band and lowest band populated by spinless fermions. We consider Li…