Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers

Abstract

Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a high-performance pure spin current source with a large spin Hall angle and high electrical conductivity, which can be fabricated by a mass production technique. In this work, we demonstrate ultrahigh efficient and robust SOT magnetization switching in all-sputtered BiSb topological insulator - perpendicularly magnetized Co/Pt multilayers. Despite fabricated by the industry-friendly magnetron sputtering instead of the laboratory molecular beam epitaxy, the topological insulator layer, BiSb, shows a large spin Hall angle of $\theta$${}_{SH}$ = 12.3 and high electrical conductivity of $\sigma$ = 1.5x$10^5$ ${\Omega }^{-1}$m${}^{-1}$. Our results demonstrate the mass production capability of BiSb topological insulator for implementation of ultralow power SOT-MRAM and other SOT-based spintronic devices.

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Cited by in corpus (7)

• Spin-orbit torque switching of magnetic tunnel junctions for memory application
• Spin-orbit torques and spin Hall magnetoresistance generated by twin-free and amorphous Bi0.9Sb0.1 topological insulator films
• Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature
• Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the conserved spin current
• Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion
• Spin Hall conductivity in Bi${}_{1-x}$Sb${}_x$ as an experimental test of bulk-boundary correspondence
• Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory