Spin-orbit torque as a method for field-free detection of in-plane magnetization switching

Abstract

We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but also for detection. Our method can detect arbitrary Mx and My component without an external magnetic field, which is useful for fast characterization of type-X, type-Y, and type-XY SOT magnetization switching. Our SOT detection scheme can be utilized not only for fast characterization of SOT switching in bilayers, but also for electrical detection of in-plane magnetic domains in race-track memory.

References in corpus (1)

• Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures

Cited by in corpus (4)

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• Efficient spin current source using a half-Heusler alloy topological semimetal with Back-End-of-Line compatibility
• Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature
• Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching