Spin-orbit torque as a method for field-free detection of in-plane magnetization switching

Abstract

We proposed and demonstrated a simple method for detection of in-plane magnetization switching by spin-orbit torque (SOT) in bilayers of non-magnetic / magnetic materials. In our method, SOT is used not only for magnetization switching but also for detection. Our method can detect arbitrary Mx and My component without an external magnetic field, which is useful for fast characterization of type-X, type-Y, and type-XY SOT magnetization switching. Our SOT detection scheme can be utilized not only for fast characterization of SOT switching in bilayers, but also for electrical detection of in-plane magnetic domains in race-track memory.

References in corpus (6)

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• A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching
• Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers
• Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction
• Fast, low-current spin-orbit torque switching of magnetic tunnel junctions through atomic modifications of the free layer interfaces
• Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures

Cited by in corpus (4)

• Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers
• Efficient spin current source using a half-Heusler alloy topological semimetal with Back-End-of-Line compatibility
• Giant spin Hall effect in half-Heusler alloy topological semimetal YPtBi grown at low temperature
• Odd symmetry planar Hall effect: A method of detecting current-induced in-plane magnetization switching