Determination of spin-orbit torque efficiencies in heterostructures with in-plane magnetic anisotropy

Abstract

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Hall effective fields and unidirectional magnetoresistance that will modify their anisotropic magnetoresistance behavior. We also demonstrate that by analyzing the response of anisotropic magnetoresistance under such influences, one can directly and electrically probe magnetization switching driven by the spin-orbit torque, even in micron-sized devices. This pump-probe method allows for efficient and direct determination of key parameters from spin-orbit torque switching events without lengthy device fabrication processes.

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Cited by in corpus (7)

• Spin-orbit torque characterization in a nutshell
• Growth-dependent Interlayer Chiral Exchange and Field-free Switching
• Field-Free Switching in Symmetry Breaking Multilayers: The Critical Role of Interlayer Chiral Exchange
• Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer
• Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime
• Anomalous sign inversion of spin-orbit torque in ferromagnetic/nonmagnetic bilayer systems due to self-induced spin-orbit torque
• Anatomy of Type-X Spin-Orbit Torque Switching