Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors

Abstract

Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm${}^2$V${}^{-1}$s${}^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times 10^{12}$ cm${}^{-2}$, and suggest a possible increase in mobility over 1000 cm${}^2$V${}^{-1}$s${}^{-1}$ by reducing the impurities.

arXiv comment17 pages, 6 figures

References in corpus (2)

• Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
• Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric

Cited by in corpus (6)

• High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
• Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment
• Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
• Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with $V_{th}<-6V$ and High On-Current
• Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor
• High-field Magnetotransport Studies of Surface Conducting Diamonds