Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure

Abstract

The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus the quantized Hall resistance can only be achieved at the magnetic field above 6 T. In this work, we propose to induce out-of-plane surface magnetism of MnBi2Te4 films via the magnetic proximity with magnetic insulator CrI3. Our calculations have revealed a strong exchange bias ~ 40 meV, originating from the long Cr-eg orbital tails that hybridize strongly with Te p-orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3 heterostructure. Our calculations also demonstrate the high Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3 heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.

arXiv comment9 Pages including Appendix

References in corpus (31)

• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Electronic Structure of Pyrochlore Iridates: From Topological Dirac Metal to Mott Insulator
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Topological Field Theory of Time-Reversal Invariant Insulators
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi${}_2$Te${}_4$
• Prediction and observation of the first antiferromagnetic topological insulator
• Intrinsic magnetic topological insulators in van der Waals layered MnBi${}_2$Te${}_4$-family materials
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• An equivalent expression of Z2 Topological Invariant for band insulators using Non-Abelian Berry's connection
• Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
• Topological axion states in magnetic insulator MnBi${}_2$Te${}_4$ with the quantized magnetoelectric effect
• Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
• Quantum Anomalous Hall Effect in Hg${}_{1-y}$Mn${}_y$Te Quantum Wells
• Robust Intrinsic Ferromagnetism and Half Semiconductivity in Stable Two-Dimensional Single-Layer Chromium Trihalides
• Stacking-Dependent Magnetism in Bilayer CrI${}_3$
• Experimental realization of an intrinsic magnetic topological insulator
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Antiferromagnetic topological insulators
• Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ films
• Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
• Wannier representation of Z_2 topological insulators
• High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels
• Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
• Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$
• Natural van der Waals heterostructural single crystals with both magnetic and topological properties
• Surface states and Rashba-type spin polarization in antiferromagnetic MnBi${}_2$Te${}_4$
• Quantum anomalous Hall effect in magnetic topological insulators
• Quantum Anomalous Hall Effect in Time-Reversal-Symmetry Breaking Topological Insulators
• Magnetize Topological Surface States of Bi2Se3 with a CrI3 Monolayer
• Suppression of the antiferromagnetic metallic state in the pressurized MnBi2Te4 single crystal

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• Electronic structures and topological phases of magnetic layered materials MnBi2Te4, MnBi2Se4 and MnSb2Te4
• An electron-counting rule to determine the interlayer magnetic coupling of the van der Waals materials
• Quantum anomalous Hall effect in two-dimensional magnetic insulator heterojunctions
• High-Curie-temperature ferromagnetism in bilayer CrI3 on bulk semiconducting substrates
• Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBi${}_8$Te${}_{13}$
• Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures
• Progress and prospects in the quantum anomalous Hall effect
• Interfacial crystal Hall effect reversible by ferroelectric polarization
• Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures
• Local manifestations of thickness dependent topology and axion edge state in topological magnet MnBi${}_2$Te${}_4$
• Controllable chirality and band gap of quantum anomalous Hall insulators
• Criteria for realizing room temperature electrical transport applications of topological materials
• Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets
• Gate-Tunable Quantum Anomalous Hall Effects in MnBi${}_2$Te${}_4$ Thin Films
• Antiferromagnetic VdW Phase at the Interface of Sputtered Topological Insulator/Ferromagnet-Bi2Te3/Ni80Fe20 Heterostructures
• On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family
• Chiral channel network from magnetization textures in 2D MnBi2Te4
• Even-Odd Layer-Dependent Exchange Bias Effect in MnBi2Te4 Chern Insulator Devices
• Ferroelectrically switchable magnetic multistates in MnBi${}_2$Te${}_4$(Bi${}_2$Te${}_3$)${}_n$ and MnSb${}_2$Te${}_4$(Sb${}_2$Te${}_3$)${}_n$ (n = 0, 1) thin films
• Group theory study of the vibrational modes and magnetic order in the topological antiferromagnet MnBi${}_2$Te${}_4$
• Three-Dirac-fermion approach to unexpected universal gapless surface states of van der Waals magnetic topological insulators
• Two-dimensional ferromagnetic extension of a topological insulator
• Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi${}_2$Te${}_4$
• Novel magnetic topological insulator FeBi${}_2$Te${}_4$ with controllable topological quantum phase
• Intrinsic ferromagnetic and antiferromagnetic axion insulators in van der Waals materials Mn\emph{X}${}_2$\emph{B}${}_2$\emph{T}${}_6$ family
• Universally optimizable strategy for magnetic gaps towards high-temperature quantum anomalous Hall states via magnetic-insulator/topological-insulator building-blocks
• Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
• Interface Engineering Enabled Low Temperature Growth of Magnetic Insulator on Topological Insulator
• Symmetry-driven anisotropic coupling effect in antiferromagnetic topological insulator: Mechanism for high-Chern-number quantum anomalous Hall state
• Hall-effect in the MnBi_2Te_4 crystal using silicon nitride nanomembrane via contacts
• Tailoring Neel orders in Layered Topological Antiferromagnets
• Electrically tunable high-Chern-number quasiflat bands in twisted antiferromagnetic topological insulators
• An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi${}_2$Te${}_4$
• Topological linear magnetoresistivity and thermoconductivity induced by noncentrosymmetric Berry curvature
• Electronic Correlations Control Interlayer Coupling and Magnetic Transition in MnBi${}_2$Te${}_4$/MnBr${}_3$ Heterostructure