activity
20152023
most citedExchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure

147 citations · 689 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mes-hall2023★ 2 cited

Visualizing near-coexistence of massless Dirac electrons and ultra-massive saddle point electrons

Abhay Kumar Nayak, Jonathan Reiner, Hengxin Tan +8

Strong singularities in the electronic density of states amplify correlation effects and play a key role in determining the ordering instabilities in various materials. Recently hi…

cond-mat.mtrl-sci2020★ 29 cited

Induced anomalous Hall effect of massive Dirac fermions in ZrTe5 and HfTe5 thin flakes

Yanzhao Liu, Huichao Wang, Huixia Fu +8

Researches on anomalous Hall effect (AHE) have been lasting for a century to make clear the underlying physical mechanism. Generally, the AHE appears in magnetic materials, in whic…

cond-mat.mtrl-sci2020★ 2 cited

Surface Conductivity in Antiferromagnetic Semiconductor CrSb

Qianheng Du, Huixia Fu, Junzhang Ma +4

The contribution of bulk and surface to the electrical resistance along crystallographic \textit{b}- and \textit{c}-axes as a function of crystal thickness gives evidence for a tem…

cond-mat.str-el2019★ 27 cited

Band inversion and topology of the bulk electronic structure in FeSeTe

Himanshu Lohani, Tamaghna Hazra, Amit Ribak +5

FeSeTe (FeSeTe) has recently emerged as a promising candidate to host topological superconductivity, with a Dirac surface state and signatures of Majorana bou…

cond-mat.mtrl-sci2019★ 147 cited

Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure

Huixia Fu, Chao-Xing Liu, Binghai Yan

The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial…

cond-mat.mes-hall2019★ 90 cited

Resolving the Topological Classification of Bismuth with Topological Defects

Abhay Kumar Nayak, Jonathan Reiner, Raquel Queiroz +6

Bulk boundary correspondence in topological materials allows to study their bulk topology through the investigation of their topological boundary modes. However, for classes that s…

cond-mat.str-el2018★ 95 cited

Finite-temperature violation of the anomalous transverse Wiedemann-Franz law

Liangcai Xu, Xiaokang Li, Xiufang Lu +7

The Wiedemann-Franz (WF) law links the ratio of electronic charge and heat conductivity to fundamental constants. It has been tested in numerous solids, but the extent of its relev…

cond-mat.mes-hall2018★ 118 cited

Observation of Spin Hall Effect in Weyl Semimetal WTe2 at Room Temperature

Bing Zhao, Dmitrii Khokhriakov, Yang Zhang +7

Discovery of topological Weyl semimetals has revealed the opportunities to realize several extraordinary physical phenomena in condensed matter physics. Specifically, these semimet…

cond-mat.str-el2018★ 50 cited

Photoexcitation Induced Quantum Dynamics of Charge Density Wave and Emergence of a Collective Mode in 1T-TaS

Jin Zhang, Chao Lian, Mengxue Guan +3

Photoexcitation is a powerful means in distinguishing different interactions and manipulating the states of matter, especially in complex quantum systems. As a well-known charge de…

cond-mat.mes-hall2018★ 109 cited

Self-Modulation Doping Effect in the High-Mobility Layered Semiconductor Bi2O2Se

Huixia Fu, Jinxiong Wu, Hailin Peng +1

Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the m…

cond-mat.mes-hall2017

Large Magnetic Anisotropy of an Iron-Porphyrin Complex on Metal Substrate

Bing Liu, Huixia Fu, Jiaqi Guan +4

Single magnetic atoms or molecules with large single-ion magnetic anisotropy are highly desired for future applications in high-density data storage and quantum computation. Here w…

cond-mat.mes-hall2016★ 19 cited

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

Huixia Fu, Zheng Liu, Chao Lian +4

Emergence of ferromagnetism in non-magnetic semiconductors is strongly desirable, especially in topological materials thanks to the possibility to achieve quantum anomalous Hall ef…

cond-mat.mtrl-sci2015★ 1 cited

From Silicene to Half-Silicane by Hydrogenation

Jinglan Qiu, Huixia Fu, Yang Xu +5

Graphane is graphene fully hydrogenated from both sides, forming a 1x1 structure, where all C atoms are in sp3 configuration. In silicene, the Si atoms are in a mix-sp2/sp3 configu…