Correlated Insulating States in Twisted Double Bilayer Graphene
arXiv:1907.10106 · doi:10.1103/PhysRevLett.123.197702
Abstract
We present a combined experimental and theoretical study of twisted double bilayer graphene with twist angles between 1° and 1.35°. Consistent with moiré band structure calculations, we observe insulators at integer moiré band fillings one and three, but not two. An applied transverse electric field separates the first moiré conduction band from neighbouring bands, and favors the appearance of correlated insulators at 1/4, 1/2, and 3/4 band filling. Insulating states at 1/4 and 3/4 band filling emerge only in a parallel magnetic field (B_{||}), whereas the resistance at half band filling is weakly dependent on B_{||}. These findings suggest that correlated insulators are favored when a moiré flat band is spectrally isolated, with spin polarization at 1/4 and 3/4 band filling and valley polarization at 1/2 band filling.
arXiv comment5 pages, 4 figures, includes supplementary material
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