Valley-selective Floquet Chern Flat Bands in Twisted Multilayer Graphene
arXiv:2007.15489 · doi:10.1103/PhysRevB.103.195146
Abstract
We show that Floquet engineering with circularly polarized light (CPL) can selectively split the valley degeneracy of a twisted multilayer graphene (TMG), and thus generate a controlled valley-polarized Floquet Chern flat band with tunable large Chern number. It offers a feasible optical way to manipulate the valley degree of freedom in moiré flat bands, and hence opens new opportunities to study the valleytronics of morié flat band systems. We thus expect that many of the valley-related properties of TMG, e.g. orbital ferromagnetism, can be switched by CPL with proper doping. We reveal a Chern number hierarchy rule for the Floquet flat bands in a generic (M+N)-layer TMG. We also illustrate that the CPL effects on TMG strongly rely on the stacking chirality, which is an unique feature of TMG. All these phenomena could be tested in the twisted double bilayer graphene systems, which is the simplest example of TMG and has already been realized in experiment.
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Cited by in corpus (14)
- Light-induced emergent phenomena in 2D materials and topological materials
- Light-matter coupling and quantum geometry in moiré materials
- Tunable moiré materials for probing Berry physics and topology
- Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number
- Multifrequency and multimode topological waveguides in a Stampfli-triangle photonic crystal with large valley Chern numbers
- Chiral limits and effect of light on the Hofstadter butterfly in twisted bilayer graphene
- Moir{é} pattern assisted geometric resonant tunneling in disordered twisted bilayer graphene
- Floquet-driven indirect exchange interaction mediated by topological insulator surface states
- Band structure and band topology in twisted homotrilayer transition metal dichalcogenides
- Light driven magnetic transitions in transition metal dichalcogenide heterobilayers
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- Topological Floquet Flat Bands in Irradiated Alternating Twist Multilayer Graphene
- Floquet engineering and non-equilibrium topological maps in twisted trilayer graphene
- Intervalley Band Crossing and Transition of Fractional Chern Insulators in Floquet Twisted Bilayer MoTe