Floquet engineering of twisted double bilayer graphene

Abstract

Motivated by the recent experimental realization of twisted double bilayer graphene (TDBG) samples we study, both analytically and numerically, the effects of circularly polarized light propagating in free space and confined into a waveguide on the band structure and topological properties of these systems. These two complementary Floquet protocols allow us to selectively tune different parameters of the system by varying the intensity and the frequency of the light. For the drive protocol in free space, in the high-frequency regime, we find that in TDBG with AB/BA stacking, we can selectively close the zone-center quasienergy gaps around one valley while increasing the gaps near the opposite valley by tuning the parameters of the drive. In TDBG with AB/AB stacking, a similar effect can be obtained upon the application of a perpendicular static electric field. Furthermore, we study the topological properties of the driven system in different settings, provide accurate effective Floquet Hamiltonians, and show that relatively strong drives can generate flat bands. On the other hand, longitudinal light confined into a waveguide couples to the components of the interlayer hopping that are perpendicular to the TDBG sheet, allowing for selective engineering of the bandwidth of Floquet zone center quasienergy bands without breaking the symmetries of the static system.

12 pages, 12 figures

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Cited by in corpus (32)

• Light-induced emergent phenomena in 2D materials and topological materials
• Light-Induced Valleytronics in Pristine Graphene
• Light-matter coupling and quantum geometry in moiré materials
• Nonlinear anomalous Hall effects probe topological phase-transitions in twisted double bilayer graphene
• Floquet-engineering topological transitions in a twisted transition metal dichalcogenide homobilayer
• Reduction of the Twisted Bilayer Graphene Chiral Hamiltonian into a $2\times 2$ matrix operator and physical origin of flat-bands at magic angles
• Recent Developments in Fractional Chern Insulators
• Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBi${}_8$Te${}_{13}$
• Light-induced phase crossovers in a quantum spin Hall system
• Topological flat bands in strained graphene: substrate engineering and optical control
• Valley-selective Floquet Chern Flat Bands in Twisted Multilayer Graphene
• Why the first magic-angle is different from others in twisted graphene bilayers: interlayer currents, kinetic and confinement energy and wavefunction localization
• Chiral limits and effect of light on the Hofstadter butterfly in twisted bilayer graphene
• A primer on twistronics: A massless Dirac fermion's journey to moiré patterns and flat bands in twisted bilayer graphene
• Tuning of Bilayer Graphene Heterostructure by Horizontally Incident Circular Polarized Light
• Optical Control of Slow Topological Electrons in Moiré Systems
• Light driven magnetic transitions in transition metal dichalcogenide heterobilayers
• Floquet Engineering of Lie Algebraic Quantum Systems
• Band structure and band topology in twisted homotrilayer transition metal dichalcogenides
• Floquet Fractional Chern Insulators and Competing Phases in Twisted Bilayer Graphene
• Topological Floquet Flat Bands in Irradiated Alternating Twist Multilayer Graphene
• Floquet Hofstadter butterfly in trilayer graphene with a twisted top layer
• Multiple Floquet Chern insulator phases in the spin-charge coupled triangular-lattice ferrimagnet: Crucial role of higher-order terms in the high-frequency expansion
• Breakdown of boundary criticality and exotic topological semimetals in $\mathcal{P}\mathcal{T}$-invariant systems
• Electronic states bound by repulsive potentials in graphene irradiated by a circularly polarized electromagnetic field
• Low-frequency and Moiré Floquet engineering: a review
• Localized Floquet states in gated bilayer graphene induced by a focused optical beam with orbital angular momentum
• Photo-induced Non-collinear Interlayer RKKY Coupling in Bulk Rashba Semiconductors
• Time-resolved ARPES and optical transport properties of irradiated twisted bilayer graphene in steady-state
• Semimetals without correspondence between the topological charge of nodal line/surface and Fermi arc
• Intervalley Band Crossing and Transition of Fractional Chern Insulators in Floquet Twisted Bilayer MoTe${}_2$
• Floquet engineering and non-equilibrium topological maps in twisted trilayer graphene