Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene
arXiv:2004.09522 · doi:10.1103/PhysRevLett.126.026801
Abstract
We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number and bands, occur at high temperatures and without the need for an external magnetic field.
6+7 pages, 5+6 figures
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- Disorder effects in two-dimensional flat-band system with next-nearest-neighbor hopping
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- Refining Heuristic Predictors of Fractional Chern Insulators using Machine Learning