Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve

Abstract

Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the origin of the deviation of spin accumulation voltages measured experimentally in a non-degenerate Si spin valve is clarified from that obtained by model calculation using the spin drift diffusion equation including the effect of the spin-dependent interfacial resistance of tunneling barriers. Unlike the case of metallic spin valves, the bias dependence of the resistance-area product for a ferromagnet/MgO/Si interface, resulting in the reappearance of the conductance mismatch, plays a central role to induce the deviation.

arXiv comment19 pages, 6 figures

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Cited by in corpus (3)

• Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
• Investigation of gating effect in Si spin MOSFET
• Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature