Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
arXiv:1810.04745 · doi:10.3390/nano8090725
Abstract
The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2.
arXiv commentMain text (3 Figures) and Supp. Info. (23 Figures)
References in corpus (27)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Anomalous Lattice Vibrations of Single and Few-Layer MoS2
- Single-Layer MoS2 Phototransistors
- Two-Dimensional Material Nanophotonics
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
- Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
- Optical Spectrum of MoS: Many-body Effects and Diversity of Exciton States
- Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
- Solar-energy conversion and light emission in an atomic monolayer p-n diode
- Local strain engineering in atomically thin MoS2
- Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
- Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2
- Band structure of MoS_2, MoSe_2, and alpha-MoTe_2: Angle-resolved photoelectron spectroscopy and ab-initio calculations
- Shear and Layer Breathing Modes in Multilayer MoS2
- Photocarrier relaxation in two-dimensional semiconductors
- Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy
- Why all the fuss about 2D semiconductors?
- Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
- Photovoltaic and photothermoelectric effect in a double-gated WSe2 device
- Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes
- Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging
- Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
- Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers
- Electronic Excitations from a Perturbative LDA+GdW Approach
- High Throughput Characterization of Epitaxially Grown Single-Layer MoS2
Cited by in corpus (29)
- A strain tunable single-layer MoS2 photodetector
- Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
- Revisiting the buckling metrology method to determine the Young's modulus of 2D materials
- Biaxial versus uniaxial strain tuning of single-layer MoS
- MoS-on-paper optoelectronics: drawing photodetectors with van der Waals semiconductors beyond graphite
- Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials
- Microheater actuators as a versatile platform for strain engineering in 2D materials
- Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe
- Phonon-assisted inter-valley scattering determines ultrafast exciton dynamics in MoSe bilayers
- An automated system for strain engineering and straintronics of 2D materials
- Biaxial strain tuning of interlayer excitons in bilayer MoS2
- Thickness identification of thin InSe by optical microscopy methods
- Optical-based thickness measurement of MoO nanosheets
- Ultrafast valley-selective coherent optical manipulation with excitons in WSe and MoS monolayers
- Integrating van der Waals materials on paper substrates for electrical and optical applications
- Photophysical comparison of liquid and mechanically exfoliated WS monolayers
- Optical microscopy-based thickness estimation in thin GaSe flakes
- Anisotropic complex refractive indices of atomically thin materials: determination of the optical constants of few-layer black phosphorus
- A pre-time-zero spatiotemporal microscopy technique for the ultrasensitive determination of the thermal diffusivity of thin films
- Magnon-exciton proximity coupling at a van der Waals heterointerface
- High harmonic generation in monolayer MoS2 controlled by resonant and near-resonant pulses on ultrashort time scales
- Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS and WS Using Reflection Spectroscopic Fingerprints
- Algorithm for Reproducible Analysis of Semiconducting 2D Nanomaterials Based on UV/VIS Spectroscopy
- Carrier and Phonon Dynamics in Multilayer WSe2 captured by Extreme Ultraviolet Transient Absorption Spectroscopy
- High-performance broadband Faraday rotation spectroscopy of 2D materials and thin magnetic films
- Dimensional crossover of charge order in IrTe with strong interlayer coupling
- Enhanced Strain Transfer and Optoelectronic Performance in MoS2 Devices via Formvar Encapsulation
- First-principles approach to ultrafast pump-probe spectroscopy in solids
- Subnanometric control of coupling between WS monolayers with a molecular spacer