STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)
arXiv:1808.05690 · doi:10.1021/acs.jpca.9b07127
Abstract
We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has previously focused on hydrogen-based chemistry for donor device fabrication. Here, to develop halogen-based chemistries for fabricating acceptor-based devices, we substituted the hydrogen resist with chlorine. Lithographic patterning was explored using both field emission patterning to desorb chlorine from large areas as well as atomic precision patterning to desorb chlorine along one to two dimer rows at a time. We varied the experimental parameters for lithographic patterning and found a positive correlation between pattern line widths and both sample bias voltage and total electron dose. Finally, the use of chlorine, bromine, and iodine as lithographic resists to broaden the range of available chemistries for future device fabrication utilizing halogen-based dopant precursors is discussed.
arXiv comment10 pages, 8 figures
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- Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-21
- PBr3 Adsorption and Dissociation on the Si(100) Surface
- Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds
- Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
- A model for atomic precision p-type doping with diborane on Si(100)-21
- Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)
- Reactivity of the Si(100)-21-Cl surface with respect to PH, PCl, and BCl: Comparison with PH on Si(100)-21-H