activity
20172022
most citedHeterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

8 citations · 13 across the 5 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci20224 cited

Reaction pathways of BCl for acceptor delta-doping of silicon

Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3

BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…

cond-mat.mtrl-sci2021

Area-selective deposition and B -doping of Si(100) with BCl

K. J. Dwyer, S. Baek, Azadeh Farzaneh +3

B-doped -layers were fabricated in Si(100) using BCl as a dopant precursor in ultrahigh vacuum. BCl adsorbed readily at room temperature, as revealed by scanning tun…

cond-mat.mtrl-sci2021

AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al

Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8

The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…

cond-mat.mes-hall2020

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

S. Tyagi, M. Dreyer, D. Bowen +6

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI sampl…

cond-mat.mes-hall2019

Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy

S. Tyagi, M. Dreyer, D. Bowen +6

The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide () samples are reported. Asymmetry in tunne…

cond-mat.mes-hall2018

STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)

K. J Dwyer, Michael Dreyer, R. E. Butera

We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has pr…