activity
20172026
most citedStrain-tunable Berry curvature in quasi-two-dimensional chromium telluride

67 citations · 176 across the 16 of their papers we have counts for

collaborators

16 papers

cond-mat.supr-con2026

Multiple Andreev Reflection Effects in Asymmetric STM Josephson Junctions

Wan-Ting Liao, S. K. Dutta, R. E. Butera +3

We have examined the electrical behavior of Josephson junctions formed by a scanning tunneling microscope (STM) with a Nb sample and a Nb tip, with normal-state resistances Rn vary…

physics.ins-det2025

Adding Radio Frequency Capabilities to a millikelvin Scanning Tunneling Microscope

Jonathan Marbey, Michael Dreyer, R. E. Butera

We present a simple home made solution enabling in-situ RF reflectometry measurements with a millikelvin scanning tunneling microscope (mk-STM). The additions described below were…

cond-mat.mtrl-sci2022★ 67 cited

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Hang Chi, Yunbo Ou, Tim B. Eldred +22

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magne…

cond-mat.mtrl-sci2022★ 4 cited

Reaction pathways of BCl for acceptor delta-doping of silicon

Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3

BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…

cond-mat.mes-hall2021★ 7 cited

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-21

Quinn Campbell, Andrew D. Baczewski, R. E. Butera +1

Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies…

cond-mat.mtrl-sci2021

Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)

Matthew S. Radue, Yifei Mo, R. E. Butera

Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arr…

cond-mat.mtrl-sci2021★ 29 cited

Area-selective deposition and B -doping of Si(100) with BCl

K. J. Dwyer, S. Baek, Azadeh Farzaneh +3

B-doped -layers were fabricated in Si(100) using BCl as a dopant precursor in ultrahigh vacuum. BCl adsorbed readily at room temperature, as revealed by scanning tun…

cond-mat.mtrl-sci2021★ 3 cited

Imaging three phases of Iodine on Ag (111) using low-temperature scanning tunneling microscopy

Michael Dreyer, Joseph Murray, Robert E. Butera

We investigated the adsorption of iodine on silver (111) in ultra-high vacuum. Using low-temperature scanning tunneling microscopy (LT-STM) measurements we catalog the complex surf…

cond-mat.mtrl-sci2021★ 21 cited

AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al

Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8

The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…

cond-mat.mes-hall2020

Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy

S. Tyagi, M. Dreyer, D. Bowen +6

Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI sampl…

cond-mat.mes-hall2019

Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy

S. Tyagi, M. Dreyer, D. Bowen +6

The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide () samples are reported. Asymmetry in tunne…

cond-mat.mes-hall2018★ 30 cited

STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)

K. J Dwyer, Michael Dreyer, R. E. Butera

We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has pr…

cond-mat.mes-hall2018

Coulomb blockade regions in sputter-deposited titanium nitride films

Michael Dreyer, Peng Xu, Kevin D. Osborn +1

We present topographic and spectroscopic scanning tunneling microscopy measurements taken on a 21 nm thick TiN film at a temperature of 4.2 K -- above the superconducting transitio…

cond-mat.mes-hall2017★ 6 cited

On local sensing of spin Hall effect in tungsten films by using STM-based measurements

Ting Xie, Michael Dreyer, David Bowen +4

The spin Hall effect in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron coated tun…

cond-mat.mes-hall2017★ 1 cited

A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

Ting Xie, Michael Dreyer, David Bowen +4

A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented and illustrated by experiments performed on…

cond-mat.mtrl-sci2017★ 8 cited

Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

E. N. Yitamben, R. E. Butera, B. S. Swartzentruber +4

Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2…