67 citations · 176 across the 16 of their papers we have counts for
16 papers
Multiple Andreev Reflection Effects in Asymmetric STM Josephson Junctions
Wan-Ting Liao, S. K. Dutta, R. E. Butera +3
We have examined the electrical behavior of Josephson junctions formed by a scanning tunneling microscope (STM) with a Nb sample and a Nb tip, with normal-state resistances Rn vary…
Adding Radio Frequency Capabilities to a millikelvin Scanning Tunneling Microscope
Jonathan Marbey, Michael Dreyer, R. E. Butera
We present a simple home made solution enabling in-situ RF reflectometry measurements with a millikelvin scanning tunneling microscope (mk-STM). The additions described below were…
Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride
Hang Chi, Yunbo Ou, Tim B. Eldred +22
Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magne…
Reaction pathways of BCl for acceptor delta-doping of silicon
Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…
Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-21
Quinn Campbell, Andrew D. Baczewski, R. E. Butera +1
Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies…
Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)
Matthew S. Radue, Yifei Mo, R. E. Butera
Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arr…
Area-selective deposition and B -doping of Si(100) with BCl
K. J. Dwyer, S. Baek, Azadeh Farzaneh +3
B-doped -layers were fabricated in Si(100) using BCl as a dopant precursor in ultrahigh vacuum. BCl adsorbed readily at room temperature, as revealed by scanning tun…
Imaging three phases of Iodine on Ag (111) using low-temperature scanning tunneling microscopy
Michael Dreyer, Joseph Murray, Robert E. Butera
We investigated the adsorption of iodine on silver (111) in ultra-high vacuum. Using low-temperature scanning tunneling microscopy (LT-STM) measurements we catalog the complex surf…
AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al
Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8
The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…
Experimental detection of surface spin-polarized electron accumulation in topological insulators using scanning tunneling microscopy
S. Tyagi, M. Dreyer, D. Bowen +6
Spin-momentum locking in the surface mode of topological insulators (TI) leads to the surface accumulation of spin-polarized electrons caused by bias current flows through TI sampl…
Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy
S. Tyagi, M. Dreyer, D. Bowen +6
The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide () samples are reported. Asymmetry in tunne…
STM-induced desorption and lithographic patterning of Cl-Si(100)-(2x1)
K. J Dwyer, Michael Dreyer, R. E. Butera
We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has pr…
Coulomb blockade regions in sputter-deposited titanium nitride films
Michael Dreyer, Peng Xu, Kevin D. Osborn +1
We present topographic and spectroscopic scanning tunneling microscopy measurements taken on a 21 nm thick TiN film at a temperature of 4.2 K -- above the superconducting transitio…
On local sensing of spin Hall effect in tungsten films by using STM-based measurements
Ting Xie, Michael Dreyer, David Bowen +4
The spin Hall effect in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron coated tun…
A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect
Ting Xie, Michael Dreyer, David Bowen +4
A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented and illustrated by experiments performed on…
Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
E. N. Yitamben, R. E. Butera, B. S. Swartzentruber +4
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2…