67 citations · 176 across the 16 of their papers we have counts for
7 papers · 1 filter
Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride
Hang Chi, Yunbo Ou, Tim B. Eldred +22
Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magne…
Reaction pathways of BCl for acceptor delta-doping of silicon
Quinn Campbell, Kevin J. Dwyer, Sungha Baek +3
BCl is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed…
Dopant Precursor Adsorption into Single-Dimer Windows: Towards Guided Self-Assembly of Dopant Arrays on Si(100)
Matthew S. Radue, Yifei Mo, R. E. Butera
Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arr…
Area-selective deposition and B -doping of Si(100) with BCl
K. J. Dwyer, S. Baek, Azadeh Farzaneh +3
B-doped -layers were fabricated in Si(100) using BCl as a dopant precursor in ultrahigh vacuum. BCl adsorbed readily at room temperature, as revealed by scanning tun…
Imaging three phases of Iodine on Ag (111) using low-temperature scanning tunneling microscopy
Michael Dreyer, Joseph Murray, Robert E. Butera
We investigated the adsorption of iodine on silver (111) in ultra-high vacuum. Using low-temperature scanning tunneling microscopy (LT-STM) measurements we catalog the complex surf…
AlCl-dosed Si(100)-21: Adsorbates, chlorinated Al chains, and incorporated Al
Matthew S. Radue, Sungha Baek, Azadeh Farzaneh +8
The adsorption of AlCl on Si(100) and the effect of annealing the AlCl-dosed substrate was studied to reveal key surface processes for the development of atomic-precisi…
Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy
E. N. Yitamben, R. E. Butera, B. S. Swartzentruber +4
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2…