Incidence of multilayers in chemically exfoliated graphene
arXiv:1807.09329 · doi:10.1038/s41598-019-55784-6
Abstract
An efficient route to synthesize macroscopic amounts of graphene is highly desired and a bulk characterization of such samples, in terms of the number of layers, is equally important. We present a Raman spectroscopy-based method to determine the distribution of the number of graphene layers in chemically exfoliated graphene. We utilize a controlled vapor-phase potassium intercalation technique and identify a lightly doped stage, where the Raman modes of undoped and doped few-layer graphene flakes coexist. The spectra can be unambiguously distinguished from alkali doped graphite, and a modeling with the distribution of the layers yields an upper limit of flake thickness of five layers with a significant single-layer graphene content. Complementary statistical AFM measurements on individual few-layer graphene flakes find a consistent distribution of the layer numbers.
References in corpus (38)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- The Raman Fingerprint of Graphene
- Graphene: Status and Prospects
- Graphene Photonics and Optoelectronics
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- High yield production of graphene by liquid phase exfoliation of graphite
- Quantifying defects in graphene via Raman spectroscopy at different excitation energies
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Chemistry with Graphene and Graphene Oxide - Challenges for Synthetic Chemists
- Raman Fingerprint of Charged Impurities in Graphene
- The Shear Mode of Multi-Layer Graphene
- Rayleigh Imaging of Graphene and Graphene Layers
- Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
- Strain-dependent Splitting of Double Resonance Raman Scattering Band in Graphene
- Phonon renormalisation in doped bilayer graphene
- Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature
- Observation of out-of-plane vibrations in few-layer graphene
- Group theory analysis of electrons and phonons in N-layer graphene systems
- The First Precise Determination of Graphene Functionalisation by in situ Raman Spectroscopy
- Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds
- Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)
- Layer breathing modes in few-layer graphene
- Giant non-adiabatic effects in layer metals: Raman spectra of intercalated graphite explained
- Phonons in potassium doped graphene: the effects of electron-phonon interactions, dimensionality and ad-atom ordering
- Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene
- Temperature-activated layer-breathing vibrations in few-layer graphene
- Experimental approval of the extended flat bands and gapped subbands in rhombohedral multilayer graphene
- Observation of Raman G-band splitting in top-doped few-layer graphene
- Raman response of Stage-1 graphite intercalation compounds revisited
- The Raman fingerprint of rhombohedral graphite
- Reductive Arylation of Graphene: Insights into a Reversible Carbon Allotrope Functionalization Reaction
- Characterizing top gated bilayer graphene interaction with its environment by Raman spectroscopy
- A broadband and high throughput single-monochromator Raman spectrometer; application for single-wall carbon nanotubes
- Testing the Elliott-Yafet spin-relaxation mechanism in KC8; a model system of biased graphene
- Transport, Magnetic and Vibrational Properties of Chemically Exfoliated Few Layer Graphene
- Adaptation of a commercial Raman spectrometer for multiline and broadband laser operation