Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction

Abstract

1T-TaS2 is a layered material that exhibits charge density wave (CDW) induced distinct electrical resistivity phases and has attracted a lot of attention for interesting device applications. However, such resistivity switching effects are often weak, and cannot be modulated by an external gate voltage - limiting their widespread usage. Using a back-gated 1T-TaS2/2H-MoS2 heterojunction, here we show that the usual resistivity switching in TaS2 due to different phase transitions is accompanied with a surprisingly strong modulation in the Schottky barrier height (SBH) at the TaS2/MoS2 interface - providing an additional knob to control the degree of the phase-transition-driven resistivity switching by an external gate voltage. In particular, the commensurate (C) to triclinic (T) phase transition results in an increase in the SBH owing to a collapse of the Mott gap in TaS2. The change in SBH allows us to estimate an electrical Mott gap opening of ~71 +/- 7 meV in the C phase of TaS2. On the other hand, the nearly-commensurate (NC) to incommensurate (IC) phase transition results in a suppression in the SBH, and the heterojunction shows a gate-controlled resistivity switching up to 17.3, which is ~14.5 times higher than that of standalone TaS2. The findings mark an important step forward showing a promising pathway to externally control as well as amplify the CDW induced resistivity switching. This will boost device applications that exploit these phase transitions, such as ultra-broadband photodetection, negative differential conductance, fast oscillator and threshold switching in neuromorphic circuits.

arXiv commentAccepted for publication in Physical Review Applied

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Cited by in corpus (6)

• Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts
• Out-of-plane transport of 1T-TaS2/graphene-based van der Waals heterostructures
• A time-domain phase diagram of metastable states in a charge ordered quantum material
• Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS${}_2$/2H-MoS${}_2$ T-Junction
• Strong Single- and Two-Photon Luminescence Enhancement by Nonradiative Energy Transfer across Layered Heterostructure
• Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS${}_2$/2H-TaSe${}_2$/2H-MoS${}_2$ Heterostructure