75 citations · 283 across the 8 of their papers we have counts for
8 papers
Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts
Krishna Murali, Medha Dandu, Kenji Watanabe +2
Due to Fermi level pinning (FLP), metal-semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to…
Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire
Pushkar Dasika, Debadarshini Samantaray, Krishna Murali +5
Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology n…
Highly tunable layered exciton in bilayer WS: linear quantum confined Stark effect versus electrostatic doping
Sarthak Das, Medha Dandu, Garima Gupta +6
In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symme…
Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications
Nithin Abraham, Krishna Murali, Kenji Watanabe +2
Van der Waals (vdW) tunnel junctions are attractive due to their atomically sharp interface, gate tunablity, and robustness against lattice mismatch between the successive layers.…
Highly Sensitive, Fast Graphene Photodetector with Responsivity A/W Using Floating Quantum Well Gate
Krishna Murali, Nithin Abraham, Sarthak Das +2
Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based…
Self-Powered, Highly Sensitive, High Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction
Krishna Murali, Kausik Majumdar
Two dimensional transition metal di-chalcogenides (TMDCs) are promising candidates for ultra-low intensity photodetection. However, the performance of these photodetectors is usual…
Gate controlled large resistance switching driven by charge density wave in 1T-TaS2/2H-MoS2 heterojunction
Mehak Mahajan, Krishna Murali, Nikhil Kawatra +1
1T-TaS2 is a layered material that exhibits charge density wave (CDW) induced distinct electrical resistivity phases and has attracted a lot of attention for interesting device app…
Gate tunable WSe2/SnSe2 backward diode with ultrahigh reverse rectification ratio
Krishna Murali, Medha Dandu, Sarthak Das +1
Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high frequency response, temperature stability, radiation hardness, and 1/…