Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Abstract

Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the room-temperature ferromagnetic domains with long-range order in semiconducting V-doped WSe2 monolayer synthesized by chemical vapor deposition. Ferromagnetic order is manifested using magnetic force microscopy up to 360K, while retaining high on/off current ratio of ~105 at 0.1% V-doping concentration. The V-substitution to W sites keep a V-V separation distance of 5 nm without V-V aggregation, scrutinized by high-resolution scanning transmission-electron microscopy, which implies the possibility of the Ruderman-Kittel-Kasuya-Yoshida interaction (or Zener model) by establishing the long-range ferromagnetic order in V-doped WSe2 monolayer through free hole carriers. More importantly, the ferromagnetic order is clearly modulated by applying a back gate. Our findings open new opportunities for using two-dimensional transition metal dichalcogenides for future spintronics.

arXiv comment16 pages, 4 figures

References in corpus (17)

• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
• Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective
• Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
• Theory of ferromagnetic (III,Mn)V semiconductors
• Controlling magnetism in 2D CrI3 by electrostatic doping
• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
• Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
• Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As
• Ferromagnetic semiconductors
• Sources of experimental errors in the observation of nanoscale magnetism
• A story of high-temperature ferromagnetism in semiconductors
• Investigation of MoS2 and Graphene Nanosheets by Magnetic Force Microscopy
• Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
• Fully electrically read-write device out of a ferromagnetic semiconductor
• Electric Contributions to Magnetic Force Microscopy Response from Graphene and MoS2 Nanosheets

Cited by in corpus (26)

• Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
• Tunable Ferromagnetism and Thermally Induced Spin Flip in Vanadium-doped Tungsten Diselenide Monolayers at Room Temperature
• Controllable p-type Doping of 2D WSe2 via Vanadium Substitution
• Probing defects and spin-phonon coupling in CrSBr via resonant Raman scattering
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Characterization of room-temperature in-plane magnetization in thin flakes of CrTe${}_2$ with a single spin magnetometer
• Hole-doping induced ferromagnetism in 2D materials
• 2D Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides
• Magnetoelectric Response of Antiferromagnetic Van der Waals Bilayers
• Interface-enhanced ferromagnetism with long-distance effect in van der Waals semiconductor
• Evidence of itinerant holes for long-range magnetic order in tungsten diselenide semiconductor with vanadium dopants
• Engineering and probing atomic quantum defects in 2D semiconductors: A perspective
• Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor
• Roadmap on Quantum Magnetic Materials
• Enhanced Magnetism in Heterostructures with Transition-Metal Dichalcogenide Monolayers
• Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion
• Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn, V, Fe-Doped $\mathrm{WS}{\mathrm{e}}_2$
• Magnetism between magnetic adatoms on monolayer NbSe${}_2$
• A DFT study of the structural and electronic properties of single and double acceptor dopants in MX2 monolayers
• Interface Magnetism in Vanadium-doped MoS${}_2$/Graphene Heterostructures
• Alloying 2D VSe2 with Pt: from a charge density wave state to a disordered insulator
• Emergent Topological Hall Effect in Fe-doped Monolayer WSe2
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• Selenization of V${}_2$O${}_5$/WO${}_3$ Bilayers for Tuned Optoelectronic Response of WSe${}_2$ Films
• Emergence of half-metallic ferromagnetism and valley polarization in transition metal substituted WSTe monolayer
• Nitrogen-Vacancy Magnetometry of Edge Magnetism in WS2 Flakes