2D Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides

Abstract

Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical and chemical properties. One promising strategy to tailor TMD properties of TMDs is to create alloys through dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers. The advantages and limitations and their impacts on the doped TMDs' structural, electrical, optical, and magnetic properties are discussed. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The TMDs' magnetic moment and circular dichroism are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.

References in corpus (14)

• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
• Valley contrasting physics in graphene: magnetic moment and topological transport
• Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures
• Intrinsic Exciton Linewidth in Monolayer Transition Metal Dichalcogenides
• Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions
• Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
• Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant
• Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes
• Ferromagnetism in Mn doped GaAs due to substitutional-interstitial complexes
• Families of magnetic semiconductors -- an overview
• Intrinsic quantum anomalous Hall phase induced by proximity in germanene/Cr${}_2$Ge${}_2$Te${}_6$ van der Waals heterostructure
• Electron transport through honeycomb lattice ribbons with armchair edges
• Step-like spectral distribution of photoelectrons at the percolation threshold in heavily $p$-doped GaAs

Cited by in corpus (3)

• An investigation on electronic and magnetic properties of Cr substituted MoS${}_2$ monolayer and multilayers-Hybrid functional calculations
• Emergent Topological Hall Effect in Fe-doped Monolayer WSe2
• Quantum Defects in 2D Transition Metal Dichalcogenides for Terahertz Technologies