Engineering and probing atomic quantum defects in 2D semiconductors: A perspective

Abstract

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts that promise to push quantum technologies beyond cryogenic environments. Mission-critical capabilities towards realizing these goals are the mitigation of accidental lattice imperfections and the deterministic generation of desirable defects. In this perspective, the authors review some of their recent results on engineering and probing atomic point defects in 2D TMDs. Furthermore we provide a personal outlook on the next frontiers in this fast evolving field.

References in corpus (17)

• Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
• Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
• Observation of charge density wave order in 1D mirror twin boundaries of single-layer MoSe2
• Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant
• Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
• Single spin resonance in a van der Waals embedded paramagnetic defect
• Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
• Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2
• Designer quantum states of matter created atom-by-atom
• How Substitutional Point Defects in Two-Dimensional WS${}_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
• Electrically driven photon emission from individual atomic defects in monolayer WS2
• The bright side of defects in MoS${}_2$ and WS${}_2$ and a generalizable chemical treatment protocol for defect passivation
• Controllable p-type Doping of 2D WSe2 via Vanadium Substitution
• Competing dynamics of single phosphorus dopant in graphene with electron irradiation
• Tomonaga-Luttinger liquid in a box: electrons confined within MoS${}_2$ mirror twin boundaries
• Band Bending and Valence Band Quantization at Line Defects in MoS${}_2$
• Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors

Cited by in corpus (3)

• Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
• Doped Mott phase and charge correlations in monolayer 1T-NbSe${}_2$
• Vibration-assisted tunneling through single Au adatoms on two-dimensional WSe2