Engineering and probing atomic quantum defects in 2D semiconductors: A perspective

Abstract

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts that promise to push quantum technologies beyond cryogenic environments. Mission-critical capabilities towards realizing these goals are the mitigation of accidental lattice imperfections and the deterministic generation of desirable defects. In this perspective, the authors review some of their recent results on engineering and probing atomic point defects in 2D TMDs. Furthermore we provide a personal outlook on the next frontiers in this fast evolving field.

References in corpus (4)

• How Substitutional Point Defects in Two-Dimensional WS${}_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain
• Controllable p-type Doping of 2D WSe2 via Vanadium Substitution
• Tomonaga-Luttinger liquid in a box: electrons confined within MoS${}_2$ mirror twin boundaries
• Band Bending and Valence Band Quantization at Line Defects in MoS${}_2$