Competing dynamics of single phosphorus dopant in graphene with electron irradiation

Abstract

Atomic-level structural changes in materials are important but challenging to study. Here, we demonstrate the dynamics and the possibility of manipulating a phosphorus dopant atom in graphene using scanning transmission electron microscopy (STEM). The mechanisms of various processes are explored and compared with those of other dopant species by first-principles calculations. This work paves the way for designing a more precise and optimized protocol for atomic engineering.

References in corpus (15)

• Ultrafast Photoluminescence from Graphene
• An accurate measurement of electron beam induced displacement cross sections for single-layer graphene
• Stone-Wales--type transformations in carbon nanostructures driven by electron irradiation
• Graphene re-knits its holes
• Manipulating low-dimensional materials down to the level of single atoms with electron irradiation
• A kilobyte rewritable atomic memory
• Silicon-carbon bond inversions driven by 60 keV electrons in graphene
• Novel Two-dimensional Carbon Allotrope with Strong Electronic Anisotropy
• Single atom manipulation and control in a scanning transmission electron microscope
• Imaging Atomic-Level Random Walk of a Point Defect in Graphene
• Electron-Beam Manipulation of Silicon Dopants in Graphene
• Single-atom spectroscopy of phosphorus dopants implanted into graphene
• Towards atomically precise manipulation of 2D nanostructures in the electron microscope
• Isotope analysis in the transmission electron microscope
• Influence of temperature on the displacement threshold energy in graphene

Cited by in corpus (14)

• Quantifying transmission electron microscopy irradiation effects using two-dimensional materials
• Machine learning in nuclear materials research
• Doping transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties
• Engineered electronic states in atomically precise artificial lattices and graphene nanoribbons
• Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene
• Creation of single vacancies in hBN with electron irradiation
• Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering
• Engineering and probing atomic quantum defects in 2D semiconductors: A perspective
• Mechanism of electron-beam manipulation of single dopant atoms in silicon
• Indirect measurement of the carbon adatom migration barrier on graphene
• Controlling hydrocarbon transport and electron beam induced deposition on single layer graphene: toward atomic scale synthesis in the scanning transmission electron microscope
• Top-down fabrication of atomic patterns in twisted bilayer graphene
• Charging-driven coarsening and melting of a colloidal nanoparticle monolayer at an ionic liquid-vacuum interface
• Single indium atoms and few-atom indium clusters anchored onto graphene via silicon heteroatoms