Manipulating low-dimensional materials down to the level of single atoms with electron irradiation

Abstract

Recent advances in scanning transmission electron microscopy (STEM) instrumentation have made it possible to focus electron beams with sub-atomic precision and to identify the chemical structure of materials at the level of individual atoms. Here we discuss the dynamics that are observed in the structure of low-dimensional materials under electron irradiation, and the potential use of electron beams for single-atom manipulation. As a demonstration of the latter capability, we show how momentum transfer from the electrons of a 60-keV Ångström-sized STEM probe can be used to move silicon atoms embedded in the graphene lattice with atomic precision.

arXiv commentpartly review (Fig. 1-3) and partly new results (Fig. 4-5)

References in corpus (18)

• Imaging Grains and Grain Boundaries in Single-Layer Graphene: An Atomic Patchwork Quilt
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• From Point Defects in Graphene to Two-Dimensional Amorphous Carbon
• Electron beam nanosculpting of suspended graphene sheets
• An accurate measurement of electron beam induced displacement cross sections for single-layer graphene
• Energy gaps in etched graphene nanoribbons
• From Graphene constrictions to single carbon chains
• Spectroscopic imaging of single atoms within a bulk solid
• Atomic-scale electron-beam sculpting of defect-free graphene nanostructures
• Stone-Wales--type transformations in carbon nanostructures driven by electron irradiation
• A kilobyte rewritable atomic memory
• The pristine atomic structure of MoS2 monolayer protected from electron radiation damage by graphene
• Atomistic simulations of the implantation of low energy boron and nitrogen ions into graphene
• Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene
• Silicon-carbon bond inversions driven by 60 keV electrons in graphene
• Imaging Atomic-Level Random Walk of a Point Defect in Graphene
• Single-atom spectroscopy of phosphorus dopants implanted into graphene
• Isotope analysis in the transmission electron microscope

Cited by in corpus (46)

• Deep Learning Analysis of Defect and Phase Evolution During Electron Beam Induced Transformations in WS2
• Single atom manipulation and control in a scanning transmission electron microscope
• Quantifying transmission electron microscopy irradiation effects using two-dimensional materials
• Implanting germanium into graphene
• Electron-Beam Manipulation of Silicon Dopants in Graphene
• Assembling Di- and Multiatomic Si Clusters in Graphene via Electron Beam Manipulation
• Towards atomically precise manipulation of 2D nanostructures in the electron microscope
• Competing dynamics of single phosphorus dopant in graphene with electron irradiation
• Cleaning graphene: comparing heat treatments in air and in vacuum
• Atomic structure of intrinsic and electron-irradiation-induced defects in MoTe2
• Exploring order parameters and dynamic processes in disordered systems via variational autoencoders
• Manifold Learning of Four-dimensional Scanning Transmission Electron Microscopy
• Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback
• Defect-Dependent Corrugation in Graphene
• Compressed Sensing of Scanning Transmission Electron Microscopy (STEM) on Non-Rectangular Scans
• Engineered electronic states in atomically precise artificial lattices and graphene nanoribbons
• Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene
• Mitigating E-beam-induced Hydrocarbon Deposition on Graphene for Atomic-Scale Scanning Transmission Electron Microscopy Studies
• Creation of single vacancies in hBN with electron irradiation
• Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering
• Graphene Lattices with Embedded Transition-Metal Atoms and Tunable Magnetic Anisotropy Energy: Implications for Spintronic Devices
• Atomic mechanisms for the Si atom dynamics in graphene: chemical transformations at the edge and in the bulk
• Influence of temperature on the displacement threshold energy in graphene
• E-beam manipulation of Si atoms on graphene edges with aberration-corrected STEM
• Aligned Stacking of Nanopatterned 2D materials -- Towards 3D printing at atomic resolution
• Direct-Writing Atom-by-Atom
• Roadmap on Atomic-scale Semiconductor Devices
• Mechanism of electron-beam manipulation of single dopant atoms in silicon
• Indirect measurement of the carbon adatom migration barrier on graphene
• Controlling hydrocarbon transport and electron beam induced deposition on single layer graphene: toward atomic scale synthesis in the scanning transmission electron microscope
• Defects induce phase transition from dynamic to static rippling in graphene
• Top-down fabrication of atomic patterns in twisted bilayer graphene
• Mapping Conductance and Switching Behavior of Graphene Devices In Situ
• Investigating phase transitions from local crystallographic analysis based on machine learning of atomic environments
• A platform for in situ synthesis in a STEM
• Three-dimensional description of vibration-assisted electron knock-on damage
• The Synthescope: A Vision for Combining Synthesis with Atomic Fabrication
• Deep analytics of atomically-resolved images: manifest and latent features
• Exploring Electron Beam Induced Atomic Assembly via Reinforcement Learning in a Molecular Dynamics Environment
• Robust multi-scale multi-feature deep learning for atomic and defect identification in Scanning Tunneling Microscopy on H-Si(100) 2x1 surface
• Quantitative electron beam-single atom interactions enabled by sub-20-pm precision targeting
• Structure and energetics of embedded Si patterns in graphene
• Angular momentum transfer from swift electrons to non-spherical nanoparticles within the dipolar approximation
• Unsupervised Machine Learning Discovery of Chemical and Physical Transformation Pathways from Imaging Data
• Your Clean Graphene is Still Not Clean
• Single indium atoms and few-atom indium clusters anchored onto graphene via silicon heteroatoms