Silicon-carbon bond inversions driven by 60 keV electrons in graphene

Abstract

We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials.

arXiv commentArticle: 12 pages, 4 figures. Supplemental Material: 9 pages, 8 figures, 1 table

References in corpus (7)

• The electronic properties of graphene
• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• A real-space grid implementation of the Projector Augmented Wave method
• An accurate measurement of electron beam induced displacement cross sections for single-layer graphene
• Stone-Wales--type transformations in carbon nanostructures driven by electron irradiation
• Graphene re-knits its holes
• Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene

Cited by in corpus (40)

• Manipulating low-dimensional materials down to the level of single atoms with electron irradiation
• Deep Learning Analysis of Defect and Phase Evolution During Electron Beam Induced Transformations in WS2
• Quantifying transmission electron microscopy irradiation effects using two-dimensional materials
• Single atom manipulation and control in a scanning transmission electron microscope
• Implanting germanium into graphene
• Electron-Beam Manipulation of Silicon Dopants in Graphene
• Assembling Di- and Multiatomic Si Clusters in Graphene via Electron Beam Manipulation
• Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide
• Single-atom spectroscopy of phosphorus dopants implanted into graphene
• Towards atomically precise manipulation of 2D nanostructures in the electron microscope
• Competing dynamics of single phosphorus dopant in graphene with electron irradiation
• Isotope analysis in the transmission electron microscope
• Exploring order parameters and dynamic processes in disordered systems via variational autoencoders
• Compressed Sensing of Scanning Transmission Electron Microscopy (STEM) on Non-Rectangular Scans
• Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene
• Doping of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering
• Direct observation of individual charges and their dynamics on graphene by low-energy electron holography
• Combined electronic excitation and knock-on damage in monolayer MoS2
• Hot-electron mediated ion diffusion in proton-irradiated magnesium oxide
• E-beam manipulation of Si atoms on graphene edges with aberration-corrected STEM
• Substitutional Si impurities in monolayer hexagonal boron nitride
• Direct-Writing Atom-by-Atom
• Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage
• Mechanism of electron-beam manipulation of single dopant atoms in silicon
• Indirect measurement of the carbon adatom migration barrier on graphene
• Direct visualization of the 3D structure of silicon impurities in graphene
• Controlling hydrocarbon transport and electron beam induced deposition on single layer graphene: toward atomic scale synthesis in the scanning transmission electron microscope
• Top-down fabrication of atomic patterns in twisted bilayer graphene
• Mapping Conductance and Switching Behavior of Graphene Devices In Situ
• Structure and Electronic States of a Graphene Double Vacancy with an Embedded Si Dopant
• A platform for in situ synthesis in a STEM
• Three-dimensional description of vibration-assisted electron knock-on damage
• The Synthescope: A Vision for Combining Synthesis with Atomic Fabrication
• Exploring Electron Beam Induced Atomic Assembly via Reinforcement Learning in a Molecular Dynamics Environment
• Quantitative electron beam-single atom interactions enabled by sub-20-pm precision targeting
• Structure and energetics of embedded Si patterns in graphene
• Unsupervised Machine Learning Discovery of Chemical and Physical Transformation Pathways from Imaging Data
• Your Clean Graphene is Still Not Clean
• Single indium atoms and few-atom indium clusters anchored onto graphene via silicon heteroatoms
• Bridging microscopy with molecular dynamics and quantum simulations: An AtomAI based pipeline