307 citations · 1.1k across the 12 of their papers we have counts for
12 papers
Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides
Feifei Xiang, Lysander Huberich, Preston A. Vargas +11
The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strong…
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi +11
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic ci…
Engineering and probing atomic quantum defects in 2D semiconductors: A perspective
Joshua A. Robinson, Bruno Schuler
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust…
Controllable p-type Doping of 2D WSe2 via Vanadium Substitution
Azimkhan Kozhakhmetov, Samuel Stolz, Anne Marie Z. Tan +10
Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D…
Vibronic response of a spin-1/2 state from a carbon impurity in two-dimensional WS
Katherine A. Cochrane, Jun-Ho Lee, Christoph Kastl +9
We demonstrate the creation of a spin-1/2 state via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichal…
How Substitutional Point Defects in Two-Dimensional WS Induce Charge Localization, Spin-Orbit Splitting, and Strain
Bruno Schuler, Jun-Ho Lee, Christoph Kastl +13
Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semicond…