150 citations · 267 across the 3 of their papers we have counts for
4 papers · 1 filter
Engineering and probing atomic quantum defects in 2D semiconductors: A perspective
Joshua A. Robinson, Bruno Schuler
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust…
Controllable p-type Doping of 2D WSe2 via Vanadium Substitution
Azimkhan Kozhakhmetov, Samuel Stolz, Anne Marie Z. Tan +10
Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D…
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
Sara Barja, Sivan Refaely-Abramson, Bruno Schuler +17
Chalcogen vacancies are considered to be the most abundant point defects in two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors, and predicted to result in de…
Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2
Bruno Schuler, Diana Y. Qiu, Sivan Refaely-Abramson +10
Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping in semiconductors. Specifically, deep in-gap defect st…