Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Abstract

Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.

13 pages, 5 figures + SI 2 pages, 2 figures

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Cited by in corpus (5)

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• Excitonic interplay between surface polar III-nitride quantum wells and MoS${}_2$ monolayer
• A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping
• Absorption and emission modulation in MoS2-GaN (0001) heterostructure by interface phonon-exciton coupling