2 papers
cond-mat.mtrl-sci2019
AlSiN, a new Nitride compound
R. Dagher, L. Lymperakis, V. Delaye +4
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350C and 1550$^\cir…
cond-mat.mtrl-sci2018
Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
Hugo Henck, Zeineb Ben Aziza, Olivia Zill +15
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic…