76 citations · 126 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2019
AlSiN, a new Nitride compound
R. Dagher, L. Lymperakis, V. Delaye +4
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350C and 1550$^\cir…
cond-mat.mtrl-sci2018★ 76 cited
Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)
Hugo Henck, Zeineb Ben Aziza, Olivia Zill +15
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic…
physics.ins-det2016★ 50 cited
A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure
Ji-yuan Zheng, Lai Wang, Di Yang +18
Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs…