Excitonic interplay between surface polar III-nitride quantum wells and MoS${}_2$ monolayer

Abstract

III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS${}_2$, also exhibit strong excitonic effects, attributed to enhanced Coulomb interactions. This study investigates excitonic interactions between surface GaN quantum well (QW) and 2D MoS${}_2$ in van der Waals heterostructures by varying the spacing between these two excitonic systems. Optical property investigation first demonstrates the effective passivation of defect states at the GaN surface through MoS${}_2$ coating. Furthermore, a strong interplay is observed between MoS${}_2$ monolayers and GaN QW excitonic transitions. This highlights the interest of the 2D material/III-nitride QW system to study near-field interactions, such as Förster resonance energy transfer, which could open up novel optoelectronic devices based on such hybrid excitonic structures.

Corrected error bars in Fig. 3

References in corpus (2)

• Electric Field Effect in Atomically Thin Carbon Films
• Mixed-Dimensional van der Waals Heterostructures

Cited by in corpus (1)

• Thermal analysis of GaN-based photonic membranes for optoelectronics